{"id":1161,"date":"2025-12-14T16:12:19","date_gmt":"2025-12-14T07:12:19","guid":{"rendered":"https:\/\/rtlearner.com\/?p=1161"},"modified":"2025-12-19T10:05:45","modified_gmt":"2025-12-19T01:05:45","slug":"rram-4-forming-compliance-current","status":"publish","type":"post","link":"https:\/\/rtlearner.com\/en\/rram-4-forming-compliance-current\/","title":{"rendered":"About RRAM \u2013 4 Forming and Compliance Current"},"content":{"rendered":"<p>What's the most common mistake RRAM researchers make? Mishandling the process? No. It's <strong>incorrectly setting up the measurement equipment<\/strong>, which can result in a complete device being burned out.<\/p>\n\n\n\n<p>The resistance change (switching) of RRAM is a process in which tiny conductive paths called filaments are created and broken. However, if this filament formation is not controlled, the device will experience permanent insulation breakdown (hard breakdown), becoming a mere \"wire.\"<\/p>\n\n\n\n<p>In this article, we will explain the <strong>electroforming process<\/strong> , which is essential for reviving RRAM, and how to set the <strong>Compliance Current,<\/strong> which is the safety belt of the device.<\/p>\n\n\n<style>.kb-table-of-content-nav.kb-table-of-content-id1161_358540-c4 .kb-table-of-content-wrap{padding-top:var(--global-kb-spacing-sm, 1.5rem);padding-right:var(--global-kb-spacing-sm, 1.5rem);padding-bottom:var(--global-kb-spacing-sm, 1.5rem);padding-left:var(--global-kb-spacing-sm, 1.5rem);box-shadow:0px 0px 14px 0px rgba(0, 0, 0, 0.2);}.kb-table-of-content-nav.kb-table-of-content-id1161_358540-c4 .kb-table-of-contents-title-wrap{padding-top:0px;padding-right:0px;padding-bottom:0px;padding-left:0px;}.kb-table-of-content-nav.kb-table-of-content-id1161_358540-c4 .kb-table-of-contents-title{font-weight:regular;font-style:normal;}.kb-table-of-content-nav.kb-table-of-content-id1161_358540-c4 .kb-table-of-content-wrap .kb-table-of-content-list{font-weight:regular;font-style:normal;margin-top:var(--global-kb-spacing-sm, 1.5rem);margin-right:0px;margin-bottom:0px;margin-left:0px;}@media all and (max-width: 767px){.kb-table-of-content-nav.kb-table-of-content-id1161_358540-c4 .kb-table-of-contents-title{font-size:var(--global-kb-font-size-md, 1.25rem);}.kb-table-of-content-nav.kb-table-of-content-id1161_358540-c4 .kb-table-of-content-wrap .kb-table-of-content-list{font-size:var(--global-kb-font-size-sm, 0.9rem);}}<\/style>\n\n<style>.kadence-column1161_74c84c-ee > .kt-inside-inner-col{box-shadow:inset 0px 0px 14px 0px rgba(0, 0, 0, 0.2);border-top:0px solid transparent;border-right:0px solid transparent;border-bottom:0px solid transparent;border-left:0px solid transparent;}.kadence-column1161_74c84c-ee > .kt-inside-inner-col,.kadence-column1161_74c84c-ee > .kt-inside-inner-col:before{border-top-left-radius:0px;border-top-right-radius:0px;border-bottom-right-radius:0px;border-bottom-left-radius:0px;}.kadence-column1161_74c84c-ee > .kt-inside-inner-col{column-gap:var(--global-kb-gap-sm, 1rem);}.kadence-column1161_74c84c-ee > .kt-inside-inner-col{flex-direction:column;}.kadence-column1161_74c84c-ee > .kt-inside-inner-col > .aligncenter{width:100%;}.kadence-column1161_74c84c-ee > .kt-inside-inner-col:before{opacity:0.3;}.kadence-column1161_74c84c-ee{position:relative;}@media all and (max-width: 1024px){.kadence-column1161_74c84c-ee > .kt-inside-inner-col{border-top:0px solid transparent;border-right:0px solid transparent;border-bottom:0px solid transparent;border-left:0px solid transparent;flex-direction:column;justify-content:center;}}@media all and (max-width: 767px){.kadence-column1161_74c84c-ee > .kt-inside-inner-col{border-top:0px solid transparent;border-right:0px solid transparent;border-bottom:0px solid transparent;border-left:0px solid transparent;flex-direction:column;justify-content:center;}}<\/style>\n<div class=\"wp-block-kadence-column kadence-column1161_74c84c-ee\"><div class=\"kt-inside-inner-col\">\n<p><strong>Related articles<\/strong><\/p>\n\n\n\n<p>\u2705<a href=\"https:\/\/rtlearner.com\/en\/rram-1-mechanism\/\">About RRAM - 1 Operation mechanism<\/a><\/p>\n\n\n\n<p>\u2705<a href=\"https:\/\/rtlearner.com\/en\/rram-2-property\/\">About RRAM - 2 Properties<\/a><\/p>\n\n\n\n<p>\u2705<a href=\"https:\/\/rtlearner.com\/en\/rram-3-crossbar-array\/\">About RRAM - 3 Crossbar array and Sneak Path Current<\/a><\/p>\n\n\n\n<p>\u2705<a href=\"https:\/\/rtlearner.com\/en\/rram-5-impedance-matching\/\">About RRAM \u2013 5 Pulse measurement and impedance matching<\/a><\/p>\n\n\n\n<p>\u2705<a href=\"https:\/\/rtlearner.com\/en\/rram-6-oxram-cbram\/\">About RRAM \u2013 6 Filament Materials: OxRAM vs. CBRAM<\/a><\/p>\n\n\n\n<p>\u2705<a href=\"https:\/\/rtlearner.com\/en\/rram-7-stdp-spike-timing-dependent-plasticity\/\">About RRAM \u2013 7 STDP (Spike-Timing-Dependent Plasticity)<\/a><\/p>\n<\/div><\/div>\n\n\n\n<h2 class=\"wp-block-heading\">1. RRAM's First Operation: Electroforming<\/h2>\n\n\n\n<p>Freshly processed RRAM devices (Pristine State, Virgin State) do not exhibit resistance change characteristics because the space between the upper and lower electrodes is sealed by a perfect insulator.<\/p>\n\n\n\n<p>To make it work as RRAM, a process is needed to open up an <strong>initial filament path<\/strong>in this insulator, called <strong>Electroforming,<\/strong> or <strong>Forming<\/strong>for short.<\/p>\n\n\n<style>.kb-image1161_04a356-3d.kb-image-is-ratio-size, .kb-image1161_04a356-3d .kb-image-is-ratio-size{max-width:580px;width:100%;}.wp-block-kadence-column > .kt-inside-inner-col > .kb-image1161_04a356-3d.kb-image-is-ratio-size, .wp-block-kadence-column > .kt-inside-inner-col > .kb-image1161_04a356-3d .kb-image-is-ratio-size{align-self:unset;}.kb-image1161_04a356-3d figure{max-width:580px;}.kb-image1161_04a356-3d .image-is-svg, .kb-image1161_04a356-3d .image-is-svg img{width:100%;}.kb-image1161_04a356-3d .kb-image-has-overlay:after{opacity:0.3;}@media all and (max-width: 767px){.kb-image1161_04a356-3d.kb-image-is-ratio-size, .kb-image1161_04a356-3d .kb-image-is-ratio-size{max-width:280px;width:100%;}.kb-image1161_04a356-3d figure{max-width:280px;}}<\/style>\n<div class=\"wp-block-kadence-image kb-image1161_04a356-3d\"><figure class=\"aligncenter\"><img decoding=\"async\" src=\"https:\/\/blog.kakaocdn.net\/dna\/bPMtOp\/dJMcafynzMX\/AAAAAAAAAAAAAAAAAAAAAJdvEOepBDVo4IslQHgbDGyjhHbSae_vemNxprAQeTs2\/img.png?credential=yqXZFxpELC7KVnFOS48ylbz2pIh7yKj8&amp;expires=1767193199&amp;allow_ip=&amp;allow_referer=&amp;signature=N8d%2FUfj3uMkVpbOfxaeWpJxg3Ic%3D\" alt=\"\" class=\"kb-img\"\/><figcaption>Forming Voltage<\/figcaption><\/figure><\/div>\n\n\n\n<h3 class=\"wp-block-heading\">Forming Features<\/h3>\n\n\n\n<ol start=\"1\" class=\"wp-block-list\">\n<li><strong>High Voltage:<\/strong> A higher voltage (e.g., 5-7 V) is required than the typical SET operating voltage (e.g., 1-2 V). This is because the initial breakthrough is the most difficult.<\/li>\n\n\n\n<li><strong>Soft Breakdown:<\/strong> Rather than completely destroying the insulator, a \"soft breakdown\" must be induced, creating only a tiny leakage path.<\/li>\n\n\n\n<li><strong>One-time:<\/strong> This typically only needs to be performed once, when the device is first powered up.<\/li>\n<\/ol>\n\n\n\n<h2 class=\"wp-block-heading\">2. Seat belt of the device: Compliance Current<\/h2>\n\n\n\n<p>When voltage is applied during the forming or SET process, filaments grow inside the insulator, and current begins to flow rapidly. This is the most dangerous moment.<\/p>\n\n\n\n<h3 class=\"wp-block-heading\">Why Burn It? (Joule Heating Runaway)<\/h3>\n\n\n\n<ol start=\"1\" class=\"wp-block-list\">\n<li>The moment the filament is connected, the resistance (R) drops dramatically.<\/li>\n\n\n\n<li>While the voltage (V) remains constant, the resistance decreases, resulting in an <strong>explosive increase in current (I)<\/strong>according to Ohm's Law (I = V\/R).<\/li>\n\n\n\n<li>This increase in current causes Joule heating, heating up the component.<\/li>\n\n\n\n<li>The heat causes the filament to grow abnormally thick, ultimately melting or permanently bonding the component (<strong>Hard Breakdown<\/strong>).<\/li>\n<\/ol>\n\n\n\n<h3 class=\"wp-block-heading\">The Role of Compliance Current<\/h3>\n\n\n\n<p>To prevent this situation, the Compliance Current (I<sub>cc<\/sub>).<\/p>\n\n\n\n<ul class=\"wp-block-list\">\n<li><strong>Example settings:<\/strong> Even if the forming voltage is swept up to 5V, if I<sub>cc<\/sub>is set to <strong>1\u00b5A<\/strong>, the current stops at exactly 1\u00b5A when the device is turned on.<\/li>\n\n\n\n<li><strong>Effect:<\/strong> Prevents the filament from becoming too thick (overshoot), making it ready for re-cutting (reset) the next time.<\/li>\n<\/ul>\n\n\n\n<h2 class=\"wp-block-heading\">3. Practical Measurement Recipe (Step-by-Step)<\/h2>\n\n\n\n<p>This is standard procedure when using equipment such as the Keithley 4200 or Keysight B1500.<\/p>\n\n\n\n<h3 class=\"wp-block-heading\">Step 1. Forming (Initial Path Breaking)<\/h3>\n\n\n\n<ul class=\"wp-block-list\">\n<li><strong>Mode:<\/strong> DC Voltage Sweep<\/li>\n\n\n\n<li><strong>Voltage:<\/strong> 0V \u2192 +5V (adjusted according to device characteristics)<\/li>\n\n\n\n<li><strong>Compliance Current (I<sub>cc<\/sub>):<\/strong> <strong>Very important!<\/strong> It is usually set low, between <strong>10nA ~ 1\u00b5A<\/strong> .<\/li>\n\n\n\n<li><strong>Result:<\/strong> Success occurs when the current reaches the I<sub>cc<\/sub> level at a specific voltage (Forming Voltage).<\/li>\n<\/ul>\n\n\n\n<h3 class=\"wp-block-heading\">Step 2. RESET (Cut the path)<\/h3>\n\n\n\n<ul class=\"wp-block-list\">\n<li><strong>Mode:<\/strong> DC Voltage Sweep (If it is a bipolar device, the polarity is opposite)<\/li>\n\n\n\n<li><strong>Voltage:<\/strong> 0V \u2192 -3V<\/li>\n\n\n\n<li><strong>Compliance Current: Do not set or leave it high (e.g. <strong>100\u00b5A<\/strong>).<\/strong>\n<ul class=\"wp-block-list\">\n<li><em>Tip:<\/em> RESET requires a large current to burn out the filament. If I<sub>cc<\/sub>is set too low, RESET will not work.<\/li>\n<\/ul>\n<\/li>\n<\/ul>\n\n\n\n<h3 class=\"wp-block-heading\">Step 3. SET (Reconnect)<\/h3>\n\n\n\n<ul class=\"wp-block-list\">\n<li><strong>Mode:<\/strong> DC Voltage Sweep<\/li>\n\n\n\n<li><strong>Voltage:<\/strong> 0V \u2192 +3V<\/li>\n\n\n\n<li><strong>Compliance Current:<\/strong> Set similar to or slightly higher than when forming (e.g. <strong>10\u00b5A ~ <strong><strong>100\u00b5A<\/strong><\/strong><\/strong>).\n<ul class=\"wp-block-list\">\n<li><em>Tip:<\/em> The size of I<sub>cc<\/sub>set at this time determines the resistance value of LRS (Low Resistance State). The higher the I<sub>cc<\/sub>, the lower the resistance (the thicker the filament).<\/li>\n<\/ul>\n<\/li>\n<\/ul>\n\n\n<style>.kb-image1161_4770ec-24.kb-image-is-ratio-size, .kb-image1161_4770ec-24 .kb-image-is-ratio-size{max-width:380px;width:100%;}.wp-block-kadence-column > .kt-inside-inner-col > .kb-image1161_4770ec-24.kb-image-is-ratio-size, .wp-block-kadence-column > .kt-inside-inner-col > .kb-image1161_4770ec-24 .kb-image-is-ratio-size{align-self:unset;}.kb-image1161_4770ec-24 figure{max-width:380px;}.kb-image1161_4770ec-24 .image-is-svg, .kb-image1161_4770ec-24 .image-is-svg img{width:100%;}.kb-image1161_4770ec-24 .kb-image-has-overlay:after{opacity:0.3;}@media all and (max-width: 767px){.kb-image1161_4770ec-24.kb-image-is-ratio-size, .kb-image1161_4770ec-24 .kb-image-is-ratio-size{max-width:280px;width:100%;}.kb-image1161_4770ec-24 figure{max-width:280px;}}<\/style>\n<div class=\"wp-block-kadence-image kb-image1161_4770ec-24\"><figure class=\"aligncenter size-full\"><a href=\"https:\/\/link.springer.com\/article\/10.1007\/s00339-016-9768-5\" class=\"kb-advanced-image-link\" target=\"_blank\" rel=\"noopener\"><img data-dominant-color=\"d8d4d9\" data-has-transparency=\"false\" style=\"--dominant-color: #d8d4d9;\" loading=\"lazy\" decoding=\"async\" width=\"387\" height=\"278\" src=\"https:\/\/rtlearner.com\/wp-content\/uploads\/2025\/12\/image-8-1.jpg\" alt=\"\" class=\"kb-img wp-image-1162 not-transparent\" srcset=\"https:\/\/rtlearner.com\/wp-content\/uploads\/2025\/12\/image-8-1.jpg 387w, https:\/\/rtlearner.com\/wp-content\/uploads\/2025\/12\/image-8-1-300x216.jpg 300w\" sizes=\"auto, (max-width: 387px) 100vw, 387px\" \/><\/a><figcaption>Compliance current control<\/figcaption><\/figure><\/div>\n\n\n\n<h2 class=\"wp-block-heading\">4. Advanced: Why You Die Even With I<sub>cc<\/sub>(Overshoot)<\/h2>\n\n\n\n<p><em>\u201cI clearly put in compliance current, but the device died!\u201d<\/em><\/p>\n\n\n\n<p>This is due to equipment limitations. There's a slight delay before the equipment responds, \"The current is too high? Reduce it.\"<\/p>\n\n\n\n<p>At this moment, a current overshoot phenomenon occurs, in which the charges stored in parasitic capacitors hidden in the cable or probe station all at once pour into the device.<\/p>\n\n\n\n<h3 class=\"wp-block-heading\">Advanced Tip<\/h3>\n\n\n\n<ol start=\"1\" class=\"wp-block-list\">\n<li><strong>Transistor connection (1T1R):<\/strong> Instead of the I<sub>cc<\/sub> of the device, it is most likely to limit the current by the Gate voltage of the transistor (physical limitation).<\/li>\n\n\n\n<li><strong>Using built-in resistors:<\/strong> Connect a resistor in series with the device (Series Resistor) to prevent excessive current.<\/li>\n<\/ol>\n\n\n\n<h2 class=\"wp-block-heading\">5. Conclusion<\/h2>\n\n\n\n<p>The most important thing in RRAM research is creating a filament of the \"appropriate thickness.\" If it's too thin, it will break quickly (poor retention), and if it's too thick, it will never break again (non-resettable). Maintaining this appropriate balance is called compliance current.<\/p>\n\n\n\n<p>When starting your first measurements in the lab, it is always a good idea to start with a low current (~1\u00b5A) and gradually increase it.<\/p>\n\n\n<style>.kadence-column1161_9527b4-61 > .kt-inside-inner-col{box-shadow:inset 0px 0px 14px 0px rgba(0, 0, 0, 0.2);border-top:0px solid transparent;border-right:0px solid transparent;border-bottom:0px solid transparent;border-left:0px solid transparent;}.kadence-column1161_9527b4-61 > .kt-inside-inner-col,.kadence-column1161_9527b4-61 > .kt-inside-inner-col:before{border-top-left-radius:0px;border-top-right-radius:0px;border-bottom-right-radius:0px;border-bottom-left-radius:0px;}.kadence-column1161_9527b4-61 > .kt-inside-inner-col{column-gap:var(--global-kb-gap-sm, 1rem);}.kadence-column1161_9527b4-61 > .kt-inside-inner-col{flex-direction:column;}.kadence-column1161_9527b4-61 > .kt-inside-inner-col > .aligncenter{width:100%;}.kadence-column1161_9527b4-61 > .kt-inside-inner-col:before{opacity:0.3;}.kadence-column1161_9527b4-61{position:relative;}@media all and (max-width: 1024px){.kadence-column1161_9527b4-61 > .kt-inside-inner-col{border-top:0px solid transparent;border-right:0px solid transparent;border-bottom:0px solid transparent;border-left:0px solid transparent;flex-direction:column;justify-content:center;}}@media all and (max-width: 767px){.kadence-column1161_9527b4-61 > .kt-inside-inner-col{border-top:0px solid transparent;border-right:0px solid transparent;border-bottom:0px solid transparent;border-left:0px solid transparent;flex-direction:column;justify-content:center;}}<\/style>\n<div class=\"wp-block-kadence-column kadence-column1161_9527b4-61\"><div class=\"kt-inside-inner-col\">\n<p><strong>Related articles<\/strong><\/p>\n\n\n\n<p>\u2705<a href=\"https:\/\/rtlearner.com\/en\/rram-1-mechanism\/\">About RRAM - 1 Operation mechanism<\/a><\/p>\n\n\n\n<p>\u2705<a href=\"https:\/\/rtlearner.com\/en\/rram-2-property\/\">About RRAM - 2 Properties<\/a><\/p>\n\n\n\n<p>\u2705<a href=\"https:\/\/rtlearner.com\/en\/rram-3-crossbar-array\/\">About RRAM - 3 Crossbar array and Sneak Path Current<\/a><\/p>\n\n\n\n<p>\u2705<a href=\"https:\/\/rtlearner.com\/en\/rram-5-impedance-matching\/\">About RRAM \u2013 5 Pulse measurement and impedance matching<\/a><\/p>\n\n\n\n<p>\u2705<a href=\"https:\/\/rtlearner.com\/en\/rram-6-oxram-cbram\/\">About RRAM \u2013 6 Filament Materials: OxRAM vs. CBRAM<\/a><\/p>\n\n\n\n<p>\u2705<a href=\"https:\/\/rtlearner.com\/en\/rram-7-stdp-spike-timing-dependent-plasticity\/\">About RRAM \u2013 7 STDP (Spike-Timing-Dependent Plasticity)<\/a><\/p>\n<\/div><\/div>\n\n\n\n<p>References: <em><a href=\"https:\/\/doi.org\/10.1016\/j.sse.2025.109288\" target=\"_blank\" rel=\"noopener\">Investigation of compliance current effect on resistive switching properties<\/a><\/em><\/p>","protected":false},"excerpt":{"rendered":"<p>What's the most common mistake RRAM researchers make? Mishandling the process?<\/p>","protected":false},"author":1,"featured_media":1164,"comment_status":"open","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_kadence_starter_templates_imported_post":false,"_kad_post_transparent":"","_kad_post_title":"","_kad_post_layout":"","_kad_post_sidebar_id":"","_kad_post_content_style":"","_kad_post_vertical_padding":"","_kad_post_feature":"","_kad_post_feature_position":"","_kad_post_header":false,"_kad_post_footer":false,"_kad_post_classname":"","footnotes":""},"categories":[114],"tags":[20,21],"class_list":["post-1161","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-rram-research","tag-memristor","tag-rram"],"_links":{"self":[{"href":"https:\/\/rtlearner.com\/en\/wp-json\/wp\/v2\/posts\/1161","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/rtlearner.com\/en\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/rtlearner.com\/en\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/rtlearner.com\/en\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/rtlearner.com\/en\/wp-json\/wp\/v2\/comments?post=1161"}],"version-history":[{"count":2,"href":"https:\/\/rtlearner.com\/en\/wp-json\/wp\/v2\/posts\/1161\/revisions"}],"predecessor-version":[{"id":1214,"href":"https:\/\/rtlearner.com\/en\/wp-json\/wp\/v2\/posts\/1161\/revisions\/1214"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/rtlearner.com\/en\/wp-json\/wp\/v2\/media\/1164"}],"wp:attachment":[{"href":"https:\/\/rtlearner.com\/en\/wp-json\/wp\/v2\/media?parent=1161"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/rtlearner.com\/en\/wp-json\/wp\/v2\/categories?post=1161"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/rtlearner.com\/en\/wp-json\/wp\/v2\/tags?post=1161"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}<!-- This website is optimized by Airlift. Learn more: https://airlift.net. Template:. Learn more: https://airlift.net. Template: 69b92da9d36f73cd2808d6e8. Config Timestamp: 2026-03-17 10:32:09 UTC, Cached Timestamp: 2026-04-18 15:52:24 UTC -->